NCE4080K 40V 80A N-Channel Enhancement Mode Power Mosfet
NCE4080K 40V 80A N-Channel Enhancement Mode Power Mosfet - Image 2
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NCE4080K 40V 80A N-Channel Enhancement Mode Power Mosfet

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Specifications:

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 80A (at 25°C)
  • RDS(ON) (Max): 6.6mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Maximum Power Dissipation (PD): 80W
  • Fast switching performance with low gate charge
  • Thermal Resistance (RθJC): 1.88°C/W

₹6,000.00

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The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The NCE4080K is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications due to its efficient performance and versatility. The NCE4080K is an N-channel MOSFET, which means it conducts when the gate voltage is positive relative to the source. This configuration allows for efficient switching operations.

Package Include : 

2 x NCE4080K MOSFET

SKU: RDNA-C32.1 Category:

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