STP110N8F6 N-Channel 80V 110A Power Mosfet – TO-220 Package


Specifications:

  • Drain-Source Voltage: 80 V
  • Gate-Source Voltage: ±20 V
  • Drain Current at TC = 25°C (continuous): 110 A
  • Drain Current at TC = 100°C (continuous): 85 A
  • Pulsed Drain Current: 440 A (pulse width is limited by the safe operating area)
  • Total Power Dissipation at TC = 25°C: 200 W
  • Single Pulse Avalanche Energy: 180 mJ (starting TJ = 25°C, ID = 55 A, VDD = 60 V)
  • Operating Junction Temperature: -55 to 175°C
  • Storage Temperature: -55 to 175°C
  • Quality: Chinese (if required original, please contact our sales team to sales@roboticsdna.in)

11,000.00

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This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. The STP110N8F6 is an excellent choice for applications requiring high current handling and efficient switching capabilities in a compact, thermally-efficient package.

Package Includes:

1 x STP110N8F6 MOSFET

SKU: RDNA-B612.3 Category:

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