This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. The STP110N8F6 is an excellent choice for applications requiring high current handling and efficient switching capabilities in a compact, thermally-efficient package.
Package Includes:
1 x STP110N8F6 MOSFET
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