NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet
NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet - Image 2
NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet - Image 3

NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

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Specifications:

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 80A (at 25°C)
  • RDS(ON) (Max): 6.6mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Maximum Power Dissipation (PD): 80W
  • Fast switching performance with low gate charge
  • Thermal Resistance (RθJC): 1.88°C/W

₹14,899.00

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The NCEP028N85D is an N-Channel Super Trench II Power MOSFET developed by Wuxi NCE Power Semiconductor Co., Ltd. This device is optimized for high-frequency switching applications, offering minimal conduction and switching losses due to its low on-state resistance and gate charge.

Features:

  • Low on-resistance and gate charge for efficient high-frequency switching
  • High power dissipation capability
  • 175°C maximum junction temperature
  • Pb-free lead plating and RoHS compliant
  • AEC-Q101 qualified for automotive applications

Applications:

  • Automotive systems
  • DC/DC converters
  • High-frequency switching
  • Synchronous rectification

Datasheet

Package Include : 

1 x NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

SKU: RDNA-B613.2 Category:

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