MOSFET

Specifications:

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 80A (at 25°C)
• RDS(ON) (Max): 6.6mΩ @ VGS = 10V
• Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 80W
• Fast switching performance with low gate charge
• Thermal Resistance (RθJC): 1.88°C/W